IGBT DESATURATION DRIVER DETAILS:
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IGBT DESATURATION DRIVER
Let us help you! As an example, the DESAT blanking capacitor discharge period can be set by a monostable pulse generator, which is activated on the rising edge of the IGBT turn on igbt desaturation. The width of the pulse may be just wide enough to firstly igbt desaturation that that the blanking capacitor is fully discharged and secondly to provide transient noise rejection on the IGBT turn on.
IGBT and MOSFET Desaturation Protection
If the input is on and igbt desaturation DESAT signal is active, this may be indicative of either an overcurrent condition or, igbt desaturation, a fault in either the gate drive circuitry or the IGBT. Due to the transient nature of the switching IGBT cycle, there may be a short interval of time when either of these signals will give an incorrect status.
To prevent erroneous actions during this igbt desaturation period, and in some embodiments, after each input edge transition a short time blanking delay may be activated before the signals become active. With reference now to FIG. The isolation system is depicted as being igbt desaturation optical isolation system e.
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The switching-off behavior of such an IGBT may therefore be varied extensively by changing the impedance of the gate circuit. Similar igbt desaturation FIG.
The important igbt desaturation explained here include the switching characteristics of such a device. Until this point, when the dip starts, the IGBT behavior can be controlled by an outer driver circuit.
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- FIELD OF THE DISCLOSURE
After this point, the IGBT self-limits the turn-off speed. Consequently, the turn-off behavior of the current I C is softer for IGBTs having field-stop with trench gate cells and also igbt desaturation in a smaller collector voltage overshoot due to the stray inductance. As the difference in the switching behavior of IGBTs having field-stop with trench gate cells results from the high carrier concentration in the conduction state, performing a desaturation prior to turn-off will allow to speed up the IGBTs. Desaturation means to lower the carrier concentration towards the planar concentration as shown in FIG. Welcome to EDABoard. Design Resources. Desaturation detection utilizes the IGBT itself as the current measurement component.
The diodes shown in the schematic ensure that the IGBT collector-emitter voltage is only monitored by the detection circuit during the on-time, when in normal operation the collector-emitter voltage is very low 1 V to 4 V typically. However if a short-circuit event occurs, the IGBT collector current increases to a level that drives the IGBT out of the saturated region and into the linear region of operation. This results in a rapid increase in the collector-emitter voltage. Get sample. Buy now. In some embodiments, this circuit implements an IGBT technology which has a igbt desaturation emitter connection that taps off a small amount of the emitter current from the IGBT for current sensing purposes at the comparator This emitter sense connection is normally connected to a resistor R which then provides a voltage signal that is proportional to the current flowing therethrough.
As will be discussed in further detail herein, the output IC chip may be configured to additionally or alternatively monitor the transistor for other potential failure conditions such as overheating and the like. As a non-limiting example, the output IC chip may include one or more components that detect temperature or overheating situations with a Negative Temperature Coefficient NTC resistor. Such components could run their appropriate temperature-checking tests when the transistor is turned off.
Purpose Of Desaturation Detector In IGBT Driver
As can be seen in the illustrative, but non-limiting, table above, the DESAT signal output by the first blanking delay component is nominally high when no DESAT condition is detected. Again, however, other isolation techniques can be used without departing from the scope of the present disclosure. In addition, in the foregoing Detailed Description, it can be seen that various features are grouped igbt desaturation in a single embodiment for the purpose of streamlining the disclosure. This method of disclosure is not to be interpreted as reflecting an intention that the claimed embodiments require more features than are expressly recited in each claim.
Rather, as the following claims reflect, inventive subject matter lies in less than all features of a single disclosed embodiment. Thus the following claims are hereby incorporated into igbt desaturation Detailed Description, with each claim standing on its own as a separate embodiment. Year of fee payment : 4. Year of fee payment : 8.
A driver circuit comprising an insulated gate bipolar transistor having a collector coupled to a voltage supply, an emitter coupled to a source of reference potential, and a gate configured to receive a control signal from a driver circuit, and a desaturation circuit conductively coupled between an insulated gate and a collector of the insulated gate bipolar igbt desaturation to desaturate the insulated gate. The desaturation circuit includes a series coupled bias voltage source, uni-directionally conducting element and switch. Electro Tech is an online community with overmembers who enjoy talking about and building electronic circuits, projects and gadgets.
To participate you need to register. Nuisance tripping is a false triggering of the fault detection when there isn't really a fault.Some of the trade-offs in enhancing insulated gate bipolar transistor (IGBT). Desaturation detection utilizes the IGBT itself as the current measurement. IGBT and MOSFET Igbt desaturation Protection. When an IGBT or MOSFET are fully " on" igbt desaturation are known to be saturated, when they exceed their maximum current.